p p ja138l march 27 ,201 5 - rev.0 1 page 1 6 0 v n - c hannel enhancement mode mosfet voltage 6 0 v current 25 0m a sot - 23 unit : inch(mm) f eatures ? r ds(on) , v gs @ 1 0 v , i d @ 2 5 0m a< 4.2 ? ? r ds(on) , v gs @ 4.5 v , i d @ 10 0m a< 5 ? ? r ds(on) , v gs @ 2.5 v, i d @ 5 0m a< 7 ? ? advanced trench process technology ? esd protected ? specially designed for relay driver , s peed line drive , etc. ? lead free in compliance wit h eu rohs 2011/65/eu directive . ? green molding compound as per iec61249 std. (halogen free) mechanical data ? case : sot - 2 3 package ? terminals : solderable per mil - std - 750, method 2026 ? approx. weight : 0.0003 ounces, 0.0084 grams ? marking: a8l parameter symbol limit units drain - source voltage v ds 6 0 v gate - source voltage v gs + 2 0 v continuous drain current i d 25 0 m a pulsed drain current i dm 10 0 0 m a power dissipation t a =25 o c p d 50 0 m w derate above 25 o c 4 m w/ o c operatin g junction an d storage temperature range t j ,t stg - 55~150 o c typical thermal resistance - j unction to ambient (note 3 ) r ja 250 o c /w maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted)
p p ja138l march 27 ,201 5 - rev.0 1 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source breakdown voltage bv dss v gs = 0 v,i d = 25 0ua 6 0 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 ua 0.8 1. 2 1. 5 v drain - source on - state resistance r ds(on) v gs = 10 v,i d = 2 5 0m a - 2. 5 4.2 gs = 4.5 v,i d = 100m a - 2.8 5 v gs = 2.5 v,i d = 50m a - 3.7 7 v gs = 1.8 v,i d = 10m a - 12 - zero gate voltage drain current i dss v ds = 60 v,v gs =0v - 0.01 1 u a gate - source leakage current i gss v gs = + 2 0v,v ds =0v - + 1.0 + 10 u a dynamic (note 4 ) total gate charge q g v ds = 15 v, i d = 2 50m a, v gs = 4.5v (note 1,2 ) - 0.7 - nc gate - source charge q gs - 0.33 - gate - drain charge q gd - 0.2 - input capacitance ciss v ds = 15 v, v gs = 0 v, f=1.0mhz - 15 - pf output capacitance coss - 8.4 - reverse transfer capacitance crss - 4.2 - turn - on delay time t d (on) v dd = 10 v, i d = 2 50m a, v g s = 10v, r g = 6 (note 1,2 ) - 7 - ns turn - on rise time tr - 22 - turn - o ff delay time t d (off) - 21 - turn - o ff fall time tf - 25 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 2 5 0 m a diode forward voltage v sd i s = 2 50m a, v gs = 0 v - 0.8 1.1 v notes : 1. pulse width < 300us, duty cycle < 2% 2. essentially independent of operating temperature typical characteristics . 3. r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal referen ce is defined as the solder mounting surface of the drain pins. mount ed on a 1 inch square pad of copper 4. guaranteed by design, not subject to product ion testing.
p p ja138l march 27 ,201 5 - rev.0 1 page 3 t ypical characteristic curves fig.1 on - region characteristics fig. 2 transfe r characteristics fig. 3 on - resistance vs. drain current fig. 4 on - resistance vs. junction temperature fig. 5 on - resistance variation with vgs. fig. 6 body d i ode characteristics
p p ja138l march 27 ,201 5 - rev.0 1 page 4 t ypical characteristic curves fig. 7 gate - charge ch aracteristics fig. 8 breakdown voltage variation vs. temperature fig. 9 threshold voltage variation with temperature . fig. 10 capacitance vs. drain - source voltage .
p p ja138l march 27 ,201 5 - rev.0 1 page 5 part no packing code version mounting pad layout p art n o p acking c ode package type pa cking type marking ver sion PJA138L _r1_00001 sot - 23 3k pcs / 7
p p ja138l march 27 ,201 5 - rev.0 1 page 6 disclaimer
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